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Updated: May 1, 2026

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
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Ga2O3 and GaN semiconductor hollow spheres
1Department of Chemistry, The Key Laboratory of Atomic and Molecular Nanosciences, Ministry of Education, Tsinghua University, Beijing, 100084, China.
Angewandte Chemie (International Ed. in English)
|July 20, 2004
Summary
No abstract available in PubMed .
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