A first-order Mott transition in LixCoO2
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Updated: Aug 22, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
C A Marianetti1, G Kotliar, G Ceder
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Abstract:
Despite many years of experimental searches for a first-order Mott transition in crystalline-doped semiconductors, none have been found. Extensive experimental work has characterized a first-order metal-insulator transition in Li(x)CoO(2), the classic material for rechargeable Li batteries, with a metallic state for x < 0.75 and insulating for x > 0.95. Using density functional theory calculations on large supercells, we identify the mechanism of this hereto anomalous metal-insulator transition as a Mott transition of impurities. Density functional theory demonstrates that for dilute Li-vacancy concentrations, the vacancy binds a hole and forms impurity states yielding a Mott insulator. The unique feature of Li(x)CoO(2) as compared with traditional doped semiconductors, such as Si:P, is the high mobility of the Li vacancies, which allows them to rearrange into two distinct phases at the temperature of the metal-insulator transition.
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