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Updated: Aug 16, 2026
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Correlation of stress and atomic-scale surface roughness evolution during intermittent homoepitaxial growth of
1Department of Materials and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Abstract:
Stress evolution during intermittent homoepitaxial growth of (111)-oriented Cu and Ag thin films has been studied. A tensile stress change is observed when growth is stopped, but the change is reversed when growth is resumed. Reflection high energy electron diffraction analysis of the atomic scale surface roughness during intermittent growth demonstrates a strong correlation between the surface structure and reversible stress evolution. The results are discussed in terms of an evolving surface defect population.
