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Related Experiment Videos

Optical selection rules in light emission from the scanning tunneling microscope.

M Sakurai1, C Thirstrup, M Aono

  • 1National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan.

Physical Review Letters
|August 25, 2004
PubMed
Summary

Optical selection rules govern light emission in scanning tunneling microscopy (STM). Polarization of emitted light from a tungsten tip and silicon surface depends on bias voltage, confirming theoretical predictions.

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Area of Science:

  • Surface Science
  • Condensed Matter Physics
  • Spectroscopy

Background:

  • Scanning tunneling microscopy (STM) enables atomic-scale surface investigation.
  • Light emission from STM (STM-induced luminescence) provides insights into electronic properties.
  • Understanding optical selection rules in STM is crucial for interpreting emission spectra.

Purpose of the Study:

  • To investigate the applicability of optical selection rules in STM light emission.
  • To determine the influence of bias voltage on the polarization of emitted light.
  • To correlate specific surface states with polarized light emission.

Main Methods:

  • Utilized a scanning tunneling microscope (STM) with a tungsten (W) tip.
  • Employed a clean silicon (Si) (001) surface as the sample.

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  • Analyzed the linear polarization of isochromat light emitted from the tunneling gap.
  • Varied the bias voltage between the STM tip and the silicon sample.
  • Main Results:

    • Observed that optical selection rules are applicable to STM light emission.
    • Demonstrated a strong dependence of light polarization on the applied bias voltage.
    • Found that pi* surface states contribute to p-polarized light emission.
    • Found that sigma* surface states contribute to s-polarized light emission.

    Conclusions:

    • Confirms the validity of optical selection rules in STM-induced light emission.
    • Highlights the role of bias voltage in controlling light polarization.
    • Provides experimental evidence for the contribution of specific silicon surface states (pi* and sigma*) to polarized light emission.