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Related Experiment Videos

Suzuki segregation in a binary Cu-Si alloy.

Budhika G Mendis1, Ian P Jones, Raymond E Smallman

  • 1Department of Metallurgy and Materials, University of Birmingham, Edgbaston, Birmingham B15 2TT, UK.

Journal of Electron Microscopy
|December 8, 2004
PubMed
Summary

Silicon segregation in copper alloys was studied. Silicon enriched stacking faults but not twin boundaries, with enrichment decreasing at higher temperatures.

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Area of Science:

  • Materials Science
  • Physical Metallurgy
  • Surface Science

Background:

  • Solute segregation at interfaces influences material properties.
  • Understanding segregation behavior in copper-silicon alloys is crucial for their application.
  • Stacking faults and twin boundaries are common defects in metallic materials.

Purpose of the Study:

  • To investigate the Suzuki segregation of silicon (Si) to stacking faults and coherent twin boundaries in a Cu-7.15 at.% Si alloy.
  • To determine the effect of annealing temperature on silicon segregation.
  • To calculate the binding energy of silicon segregation to stacking faults.

Main Methods:

  • Field-emission gun transmission electron microscopy (FEG-TEM) was employed.
  • Heat treatment was performed at 275, 400, and 550 degrees C.
  • McLean isotherm analysis was used to calculate binding energy.

Main Results:

  • Significant silicon enrichment was observed at stacking fault planes.
  • Silicon concentration at stacking faults decreased monotonically with increasing annealing temperature.
  • Minimal segregation of silicon was observed at coherent twin boundaries.

Conclusions:

  • The observed silicon segregation to stacking faults is attributed to a decrease in stacking fault energy with increasing electron-to-atom ratio.
  • The binding energy for segregation to stacking faults was calculated to be -0.021 ± 0.019 eV atom⁻¹.
  • Lower interfacial energy of coherent twin boundaries compared to stacking faults diminishes the driving force for segregation.

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