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Published on: July 17, 2015
Crystallographic orientation contrast associated with Ga+ ion channelling for Fe and Cu in focused ion beam method
1Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, Higashi-ku, Fukuoka 812-8581, Japan.
Abstract:
In this study, Cu and Fe single crystals are used to examine the change in secondary electron intensity associated with Ga(+) ion channelling in a focused ion beam (FIB) system. The single crystals having three different orientations are tilted with respect to the beam incidence and the resulting variation in the secondary electron intensity is measured through the variation in brightness of the crystals. It is shown that intensity minima appear at the beam directions normal to the lower indices of the crystal orientations. The appearance of the intensity minima including the magnitude of the minima is consistent with the prediction based on the event of ion channelling in the crystal and is affected by the crystal structure. The effect of background on the intensity minima is discussed in this study. It is suggested that the presence of the intensity minima may be used to identify a crystal orientation including a crystal structure.
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