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Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction
1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan. dchiba@riec.tohoku.ac.jp
Physical Review Letters
|December 17, 2004
Summary
This study demonstrates current-driven magnetization reversal in a (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30 K. Low critical current densities were achieved, suggesting potential for spintronic devices.
Area of Science:
- Spintronics
- Semiconductor physics
- Materials science
Background:
- Ferromagnetic semiconductors offer unique spintronic properties.
- Magnetic tunnel junctions are key components in magnetic sensors and memory devices.
- Understanding current-driven magnetization dynamics is crucial for device applications.
Purpose of the Study:
- To demonstrate current-driven magnetization reversal in a (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction.
- To investigate the critical current densities required for magnetization switching.
- To explore the influence of spin-orbit interaction on magnetization dynamics in this system.
Main Methods:
- Fabrication of a nanoscale magnetic tunnel junction device (1.5 x 0.3 microm2).
- Magnetoresistance measurements at 30 K.
- Application of current pulses to induce magnetization switching.
Main Results:
- Successful demonstration of current-driven magnetization reversal at 30 K.
- Observation of low critical current densities (1.1-2.2 x 10(5) A/cm2).
- Magnetization switching occurred despite the presence of spin-orbit interaction in the p-type semiconductor.
Conclusions:
- Current-driven magnetization reversal is feasible in (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junctions.
- The observed low critical current densities are promising for energy-efficient spintronic devices.
- Further investigation into the underlying mechanisms, including spin-orbit interaction, is warranted.