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Updated: Aug 20, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Local optical properties, electron densities, and london dispersion energies of atomically structured grain
Klaus van Benthem1, Guolong Tan, Linda K DeNoyer
1Max-Planck-Institut für Metallforschung, Heisenbergstrasse 3, 70569 Stuttgart, Germany.
Abstract:
Quantitative analysis of spatially resolved valence electron energy-loss spectra shows strong physical property contrasts for Sigma5 and near Sigma13 grain boundaries in Fe-doped SrTiO3, resulting in London dispersion interaction energies of 14 to 50 mJ/m(2) between the adjacent grains. The determination of local physical properties of grain boundary cores and the appreciable contribution of long-range London dispersion to interface energies provides new information on formation and control of interfaces in materials.
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