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Updated: Aug 19, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Organic homojunction diodes with a high built-in potential: interpretation of the current-voltage characteristics by
K Harada1, A G Werner, M Pfeiffer
1Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany.
Abstract:
We realize p- and n-type doping of the organic semiconductor zinc-phthalocyanine using a novel strong organic donor. This allows us to demonstrate the first stable and reproducible organic p-n homojunctions. The diodes show very high built-in potentials, attractive, e.g., for organic solar cells. However, the diode characteristics cannot be described by the standard Shockley theory of the p-n junction since the ideality factor strongly increases with decreasing temperature. We show that this behavior can be explained by deviations from the Einstein relation for disordered materials.
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