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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7−δ/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 (STO) Single-crystal Substrates
Published on: April 12, 2019
Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 films
M Eblen-Zayas1, A Bhattacharya, N E Staley
1School of Physics and Astronomy, University of Minnesota, 116 Church St. SE, Minneapolis, Minnesota 55455, USA.
Abstract:
Ultrathin La(0.8)Ca(0.2)MnO(3) films have been measured in a field-effect geometry. The gate electric field produces a significant ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the coupling of localized charge to strain. Within a mixed phase scenario, the gate effect and magnetoresistance are interpreted in the framework of a "general susceptibility," which describes how phase boundaries move through a hierarchical pinning landscape.
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