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Updated: May 6, 2026

Quasi-light Storage for Optical Data Packets

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

A continuous-wave Raman silicon laser.

Haisheng Rong¹, Richard Jones, Ansheng Liu

¹Intel Corporation, 2200 Mission College Blvd, CHP3-109, Santa Clara, California 95054, USA. haisheng.rong@intel.com

|February 18, 2005

Summary

This summary is machine-generated.

Researchers developed a continuous-wave silicon Raman laser by reducing nonlinear optical loss. This breakthrough overcomes a major hurdle in silicon photonics, enabling stable, tunable laser output for advanced optoelectronic devices.

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Area of Science:

Photonics
Materials Science
Semiconductor Physics

Background:

Silicon's indirect bandgap limits light emission efficiency, posing challenges for silicon-based photonics.
Stimulated Raman scattering has enabled silicon lasing but was previously restricted to pulsed operation due to nonlinear optical losses.

Purpose of the Study:

To demonstrate a continuous-wave (CW) silicon Raman laser.
To overcome the limitations of two-photon absorption (TPA)-induced free carrier absorption (FCA) in silicon waveguides.

Main Methods:

Integrated a reverse-biased p-i-n diode within a silicon waveguide to mitigate TPA-induced FCA.
Utilized multilayer dielectric films on waveguide facets to form the laser cavity.
Employed stimulated Raman scattering for light amplification and lasing.

Main Results:

Achieved stable, single-mode laser output with side-mode suppression exceeding 55 dB.
Demonstrated a narrow linewidth of less than 80 MHz.
Observed that lasing threshold is dependent on p-i-n reverse bias voltage and pump laser wavelength.

Conclusions:

Successfully demonstrated the first continuous-wave silicon Raman laser.
The integration of a reverse-biased p-i-n diode effectively reduces nonlinear optical loss in silicon.
This advancement is a significant milestone for silicon-based optoelectronics and integrated photonics.