Novel synthesis of two-dimensional TiS2 nanocrystallites on Au111

We describe a novel approach to synthesize two-dimensional nanocrystalline TiS2 islands on Au111. Ti is deposited by physical vapor deposition at room temperature on AuS-covered Au111 surfaces. Subsequent annealing to temperatures between 670 K and 800 K leads to the formation of single-layer, triangular TiS2 islands. These TiS2 nanocrystallites reflect the structure of bulk TiS2, and are composed of S-Ti-S stacking units with hexagonally close-packed layers of sulfur atoms and titanium occupying the octahedral sites in between. The lattice constant of the hexagonal unit cell is 3.45 A. A superlattice with a repeat distance of 17.3 A results from the coincidence of five TiS2 units with six Au atoms and is observed in scanning tunneling microscopy and low energy electron diffraction. The triangular shape of the islands indicates a preference for one of the two possible edge terminations. The observation of two island orientations rotated by 60 degrees with respect to each other can be attributed to the formation of twin-related TiS2 domains. The population of the two different island orientations changes during annealing at 800 K indicating a thermodynamic preference for one of the possible stacking sequences.