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[Three-dimensional microanalysis of arsenic impurity in silicon]
Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu
|August 1, 1997
Summary
Synchrotron radiation X-ray microfluorescence and total reflection X-ray fluorescence accurately mapped arsenic distribution on silicon wafers. Results were validated by secondary ion mass spectrometry, showing good agreement for impurity analysis.
Area of Science:
- Materials Science
- Analytical Chemistry
- Semiconductor Physics
Context:
- Precise characterization of semiconductor materials is crucial for device performance.
- Understanding impurity distribution in silicon wafers is essential for microelectronics fabrication.
- Advanced analytical techniques are needed to probe nanoscale material properties.
Purpose:
- To determine the three-dimensional distribution of arsenic (As) impurity concentration on silicon wafer surfaces.
- To compare the efficacy of synchrotron radiation X-ray microfluorescence (SRXRF) and total reflection X-ray fluorescence (TXRF) for arsenic profiling.
- To validate the SRXRF and TXRF results using a complementary technique.
Summary:
- Three-dimensional arsenic impurity concentration on silicon wafer surfaces was analyzed using synchrotron radiation X-ray microfluorescence (SRXRF) and total reflection X-ray fluorescence (TXRF).
- Depth profiling of arsenic was performed and the results were cross-verified with secondary ion mass spectrometry (SIMS).
- A good agreement was observed between the X-ray fluorescence techniques and SIMS, confirming the accuracy of the arsenic distribution analysis.
Impact:
- Provides a reliable method for characterizing arsenic distribution in silicon, aiding in semiconductor quality control.
- Enhances the understanding of impurity segregation and diffusion in silicon wafer manufacturing.
- Enables optimization of semiconductor fabrication processes through accurate impurity mapping.