Stochastic resonance in bulk semiconductor lasers

Area of Science:

• Nonlinear dynamics
• Semiconductor lasers
• Quantum optics

Background:

• Mode hopping in semiconductor lasers is a complex nonlinear phenomenon.
• Controlling the stochastic time scale of mode hopping is crucial for laser applications.
• External noise and modulation can significantly influence laser dynamics.

Purpose of the Study:

• To investigate the effect of external noise and sinusoidal modulation on mode hopping in semiconductor lasers.
• To demonstrate and characterize stochastic resonance in the modal intensities of a bulk semiconductor laser.
• To explore the relationship between modulation parameters, laser temperature, and resonance phenomena.

Main Methods:

• Tuning laser substrate temperature and pumping current to control mode hopping time scales.
• Applying external noise and sinusoidal modulation to the pumping current.
• Analyzing modal intensities in the spectral domain.
• Statistical analysis of residence time probability distributions.
• Varying modulation frequency to identify bona fide resonance.

Main Results:

• Symmetry of residence times during mode hopping can be maintained by tuning temperature and current.
• Sinusoidal modulation below a critical amplitude does not affect hopping symmetry.
• Stochastic resonance is observed in modal intensities under specific modulation conditions.
• Resonance is confirmed through spectral analysis and statistical indicators.
• Resonance occurs at modulation periods twice the average residence time without modulation.

Conclusions:

• The stochastic time scale of mode hopping in semiconductor lasers is controllable.
• Stochastic resonance can be induced and observed in semiconductor lasers.
• Laser substrate temperature plays a key role in determining resonance conditions.
• This study provides a method for characterizing and potentially utilizing stochastic resonance in semiconductor lasers.