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Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001)

Taisuke Ohta1, D A Schmidt, Shuang Meng

  • 1Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA.

Physical Review Letters
|May 21, 2005
PubMed

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