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Updated: Aug 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Delocalized nature of the E'delta center in amorphous silicon dioxide
G Buscarino1, S Agnello, F M Gelardi
1Department of Physical and Astronomical Sciences, University of Palermo and Istituto Nazionale per la Fisica della Materia, Via Archirafi 36, I-90123 Palermo, Italy. buscarin@fisica.unipa.it
Abstract:
We report an experimental study by electron paramagnetic resonance (EPR) of E(')(delta) point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E(')(delta) center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.
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