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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Scanning electron microscopy of negatively stained catalase on a silicon wafer
T Furuno1, K M Ulmer, H Sasabe
1Frontier Research Program, RIKEN, Institute of Physical and Chemical Research, Saitama, Japan.
Abstract:
A high-resolution scanning electron microscope capable of 7 A spatial resolution at 30-kV accelerating voltage was used to observe negatively stained protein molecules. Thin platelet crystals, densely packed monolayers, and low-density deposits of beef liver catalase were prepared on the surface of silicon wafers and negatively stained with phosphotungstic acid. The tetrameric structure of the catalase molecule was observed for the first time by scanning electron microscopy on the surface of the smooth silicon wafer.
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