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Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization
Gun-Young Jung1, Zhiyong Li, Wei Wu
1Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA.
Langmuir : the ACS Journal of Surfaces and Colloids
|June 29, 2005
Summary
Improving resist adhesion in nanoimprint lithography is crucial for smaller features. Surface linker molecules dramatically enhanced adhesion, enabling a 30 nm half-pitch nanowire pattern.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Resist detachment from substrates is a major challenge in nanoimprint lithography, especially for high-resolution patterns.
- Decreasing feature pitch exacerbates adhesion issues during mold-substrate separation.
Purpose of the Study:
- To address resist detachment challenges in nanoimprint lithography.
- To enhance resist adhesion to the substrate for high-resolution pattern transfer.
Main Methods:
- Analysis of surface and interfacial free energies in the mold-polymer-substrate system.
- Design of system chemistry to optimize the final state for adhesion.
- Modification of substrate surfaces by assembling a monolayer of surface linker molecules.
Main Results:
- Significantly improved resist adhesion to the substrate was achieved.
- Successful imprinting of a 37 nanowire pattern with a 30 nm half-pitch was demonstrated.
- The surface modification strategy effectively prevented resist detachment.
Conclusions:
- Assembling surface linker molecule monolayers is an effective strategy to enhance resist adhesion in nanoimprint lithography.
- This method enables the fabrication of high-resolution nanostructures with improved fidelity.
- The findings contribute to advancing nanoimprint lithography for nanoscale manufacturing.