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Dynamics of a bonding front
F Rieutord1, B Bataillou, H Moriceau
1CEA-Département de Recherche Fondamentale, Matière Condensée, F-38054 Grenoble Cedex 9, France.
Physical Review Letters
|August 11, 2005
Summary
A new model describes how bonding fronts spread between adhesive plates, like in wafer bonding. It links bonding speed to adhesion energy, considering air drag for better experimental predictions.
Area of Science:
- Materials Science
- Physics
- Engineering
Background:
- Wafer direct bonding is a critical process in semiconductor manufacturing.
- Understanding the dynamics of bonding front propagation is essential for process optimization.
Purpose of the Study:
- To propose a physical model for bonding front propagation between adhesive plates.
- To relate the bonding velocity to adhesion energy and process parameters.
Main Methods:
- Derivation of a model based on energy balance between adhesion and viscous drag.
- Experimental validation using wafer bonding.
Main Results:
- The model accurately predicts bonding front velocity.
- The model explains experimental data including wafer deformation and velocity dependence on gas viscosity, pressure, and wafer thickness.
Conclusions:
- The proposed model provides a robust description of bonding front propagation.
- This work offers insights into optimizing wafer direct bonding processes.