Related Experiment Video
Updated: Aug 4, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Submicronic Laue diffraction to determine in-depth strain in very closely matched complex HgCdTe/CdZnTe
Abstract:
Cross-sectional submicronic Laue diffraction has been successfully applied to HgCdTe/CdZnTe heterostructures to provide accurate strain profiles from substrate to surface. Combined with chemical-sensitive techniques, this approach allows correlation of lattice-mismatch, interface compositional gradient and strain while isolating specific layer contributions which would otherwise be averaged using conventional X-ray diffraction. The submicronic spatial resolution allowed by the synchrotron white beam size is particularly suited to complex infrared detector designed structures such as dual-color detectors. The extreme strain resolution of 10-5 required for the very low lattice-mismatch system HgCdTe/CdZnTe is demonstrated.
Related Concept Videos
X-ray Crystallography
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...
Determination of Crystal Structures

