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Updated: Aug 15, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Anisotropy of spin splitting and spin relaxation in lateral quantum dots
Vladimir I Fal'ko1, B L Altshuler, O Tsyplyatyev
1Physics Department, Lancaster University, UK.
Abstract:
Inelastic spin relaxation and spin splitting epsilon(s) in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, epsilon(s) demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B ||[100] than for B || [110].
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