Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

First-principles mobility calculations and atomic-scale interface roughness in nanoscale structures.

M H Evans1, X-G Zhang, J D Joannopoulos

  • 1Department of Physics, Massachusetts Institute of Technology, Cambridge, 02139, USA.

Physical Review Letters
|October 4, 2005
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

A homozygous variant in HFM1 causes preimplantation embryo developmental arrest by disrupting zygotic genome activation.

Human reproduction (Oxford, England)·2025
Same author

Safety and efficacy of using Judkins left 3.5 guiding catheters for transradial right coronary artery intervention.

European review for medical and pharmacological sciences·2023
Same author

Solving Anderson Impurity Model by the Effective Hamiltonian Theory.

The journal of physical chemistry. A·2023
Same author

Decreased serum SIRT6 as a novel predictor of coronary artery disease.

European review for medical and pharmacological sciences·2021
Same author

Androgen receptor inhibition alleviated inflammation in experimental autoimmune myocarditis by increasing autophagy in macrophages.

European review for medical and pharmacological sciences·2021
Same author

Effect of miR-26b on gestational diabetes mellitus in rats via PI3K/Akt signaling pathway.

European review for medical and pharmacological sciences·2020
Same journal

Erratum: Spectroscopy and Ground-State Transfer of Ultracold Bosonic ^{39}K^{133}Cs Molecules [Phys. Rev. Lett. 135, 203401 (2025)].

Physical review letters·2026
Same journal

Erratum: Lifetime of the ^{2}F_{7/2} Level in Yb^{+} for Spontaneous Emission of Electric Octupole Radiation [Phys. Rev. Lett. 127, 213001 (2021)].

Physical review letters·2026
Same journal

Laser-Plasma Based Seeded Free Electron Laser in the High-Gain Regime.

Physical review letters·2026
Same journal

Parent Hamiltonians for Stabilizer Quantum Many-Body Scars.

Physical review letters·2026
Same journal

Properties of Heavy Cosmic Nuclei Phosphorus, Chlorine, Argon, Potassium, and Calcium: Results from the Alpha Magnetic Spectrometer.

Physical review letters·2026
Same journal

Role of Spin-Isospin Symmetries in Nuclear β-Decays.

Physical review letters·2026
See all related articles

New methods calculate electron mobility in nanoscale structures by considering atomic details. This reveals how surface roughness significantly reduces mobility in ultrathin silicon devices.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Physics

Background:

  • Traditional mobility calculations lack atomic detail, failing for nanoscale structures.
  • Understanding electron transport in ultrathin semiconductor devices is crucial for next-generation electronics.

Purpose of the Study:

  • Develop and apply a novel method for calculating mobilities using atomic-scale models.
  • Investigate the impact of atomic-scale roughness on electron mobilities in ultrathin silicon-on-insulator structures.

Main Methods:

  • Utilized density functional theory (DFT) with varying levels of accuracy.
  • Employed atomic-scale modeling to capture structural nuances.
  • Calculated electron mobilities in double-gate silicon-on-insulator (SOI) devices.

Related Experiment Videos

Main Results:

  • The new method accurately models mobilities at the atomic scale.
  • Atomic-scale roughness was found to significantly reduce electron mobility.
  • The study elucidates the origin of mobility reduction in ultrathin structures at low electron densities.

Conclusions:

  • Atomic-scale simulations are essential for understanding electron transport in nanoscale devices.
  • Surface roughness is a key factor limiting electron mobility in ultrathin SOI.
  • The developed method provides a pathway for accurate prediction of device performance.