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Sawtooth faceting in silicon nanowires
F M Ross1, J Tersoff, M C Reuter
1IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA. fmross@us.ibm.com
Physical Review Letters
|October 26, 2005
Summary
We observed oscillating growth in silicon nanowires, leading to a unique sawtooth pattern on their sides. This pattern impacts electronic properties and may occur in other similar growth systems.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Physics
Background:
- Silicon nanowires (SiNWs) are crucial for nanoelectronic devices.
- Understanding their growth mechanisms is key to controlling their properties.
- The vapor-liquid-solid (VLS) method is a common technique for SiNW synthesis.
Purpose of the Study:
- To observe and analyze the in situ growth process of SiNWs using VLS.
- To investigate the cause of periodic sawtooth faceting on nanowire sidewalls.
- To understand the implications of this structure on electronic properties.
Main Methods:
- In situ observation of VLS growth of SiNWs.
- Utilizing Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) with a gold (Au) catalyst.
- Analysis of nanowire sidewall morphology.
Main Results:
- Periodic sawtooth faceting was observed on the sidewalls of SiNWs during VLS growth.
- This faceting is attributed to oscillatory growth driven by geometric and surface energy interplay.
- The sawtooth structure is likely present in VLS systems lacking stable orientations parallel to growth.
Conclusions:
- The sawtooth structure in SiNWs arises from an oscillatory growth process.
- This morphology significantly influences electron mobility and scattering.
- The findings are relevant for optimizing nanowire-based electronic devices.