Related Experiment Video
Updated: Apr 16, 2026

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays
Published on: April 15, 2013
Wetting transition for carbon nanotube arrays under metal contacts
1IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Abstract:
Structural arrays with nanoscale spacing arise in many device concepts. Carbon nanotube transistors are an extreme example, where a practical technology will require arrays of parallel nanotubes with spacing of order 10 nm or less. We show that with decreasing pitch there is a first-order transition, from a robust structure in which the metal wets the substrate between tubes, to a poorly wetting structure in which the metal rides atop the nanotube array without touching the substrate. The latter is analogous to the superhydrophobic "lotus leaf effect." There is a sharp minimum in the delamination energy of metal contacts at the transition pitch. We discuss implications for contact resistance and possible mitigation strategies.
More Related Videos
09:20Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
12:20Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
Published on: July 22, 2013