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Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber
Hans Lindberg1, Mahdad Sadeghi, Mathias Westlund
1Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden. hans.lindberg@mc2.chalmers.se
Optics Letters
|October 29, 2005
Summary
This study demonstrates a passively mode-locked semiconductor disk laser operating at 1550 nm. It achieves high-power output using a diamond heat spreader and a GaInNAs saturable absorber mirror.
Area of Science:
- Optics and Photonics
- Semiconductor Lasers
- Materials Science
Background:
- Semiconductor disk lasers (SDLs) are crucial for various applications.
- High-power operation and thermal management are key challenges in SDLs.
- Passive mode-locking enables ultrashort pulse generation.
Purpose of the Study:
- To demonstrate passive mode-locking in an InP-based 1550 nm semiconductor disk laser.
- To enhance thermal management for high-power operation.
- To characterize the output pulses and power.
Main Methods:
- Utilized a Gallium Indium Arsenide Nitride (GaInNAs) saturable absorber mirror for passive mode-locking.
- Integrated a 50 micrometer thick diamond heat spreader to mitigate material heating.
- Optically pumped the InP-based gain chip.
Main Results:
- Achieved stable passive mode-locking at a repetition frequency of 2.97 GHz.
- Generated near-transform-limited pulses with a duration of 3.2 picoseconds.
- Obtained an average output power of 120 milliwatts.
Conclusions:
- The integration of a diamond heat spreader effectively reduces material heating in optically pumped SDLs.
- Passive mode-locking with a GaInNAs saturable absorber mirror is a viable technique for high-power, ultrashort pulse generation in InP-based lasers.
- The demonstrated laser system shows potential for applications requiring high-power, short-wavelength infrared (SWIR) emission.
