Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber
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Published on: November 22, 2019
Hans Lindberg1, Mahdad Sadeghi, Mathias Westlund
1Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden. hans.lindberg@mc2.chalmers.se
Abstract:
Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 microm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.
