Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties
Jr H He1, Chang S Lao, Lih J Chen
1School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
Journal of the American Chemical Society
|November 25, 2005
Abstract:
Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.
