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Updated: Aug 14, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures
M Prunnila1, P Kivinen, A Savin
1VTT Information Technology, P.O. Box 1208, FIN-02044 VTT, Espoo, Finland. mika.prunnila@vtt.fi
Abstract:
We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5-16.0) x 10(25) m(-3) are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.
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