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Generation of mid-infrared radiation by self-difference frequency mixing in chromium-doped zinc selenide

Myriam Raybaut1, Antoine Godard, Riad Haïdar

  • 1Office National d'Etudes et de Recherches Aérospatiales, Chemin de la Hunière, Palaiseau, France. myriam.raybaut@onera.fr

Optics Letters
|January 31, 2006
PubMed

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...