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Silicon drift and pixel devices for X-ray imaging and spectroscopy
1MPI-Halbleiterlabor, Otto Hahn Ring 6, D-81739 München, Germany. gerhard.lutz@hll.mpg.de
Journal of Synchrotron Radiation
|February 24, 2006
Summary
Sophisticated silicon detectors, inspired by semiconductor drift detectors, show promise for X-ray astronomy and spectroscopy. Further developments aim for applications in synchrotron radiation experiments.
Area of Science:
- Physics
- Materials Science
- Astronomy
Background:
- Photon detection is fundamental to semiconductor applications.
- Semiconductor drift detectors (SDDs) are a key technology.
- Advanced silicon detectors build upon SDD principles.
Purpose of the Study:
- To discuss the function, principles, and properties of advanced silicon detectors.
- To highlight their current and potential applications.
- To explore future detector developments.
Main Methods:
- Review of semiconductor photon detection processes.
- Analysis of silicon detector designs inspired by SDDs.
- Examination of detector performance in various applications.
Main Results:
- pn-Charged Coupled Devices (CCDs) demonstrate potential in X-ray astronomy.
- Silicon drift diodes excel in X-ray spectroscopy.
- New detector types (DEPFET pixel and macro-pixel detectors) are under development.
Conclusions:
- Advanced silicon detectors are highly suitable for synchrotron radiation experiments.
- Ongoing research promises expanded applications in scientific research.
- These detectors represent a significant advancement in photon detection technology.
