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Updated: Jul 3, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Transport properties of strongly correlated electrons in quantum dots studied with a simple circuit model
G B Martins1, C A Büsser, K A Al-Hassanieh
1Department of Physics, Oakland University, Rochester, Michigan 48309, USA. martins@oakland.edu
Abstract:
Numerical calculations are shown to reproduce the main results of recent experiments involving nonlocal spin control in quantum dots [Craig, Science 304, 565 (2004).]. In particular, the experimentally reported zero-bias-peak splitting is clearly observed in our studies. To understand these results, a simple "circuit model" is introduced and shown to qualitatively describe the experiments. The main idea is that the splitting originates in a Fano antiresonance, which is caused by having one quantum dot side connected in relation to the current's path. This scenario provides an explanation of the results of Craig et al. that is an alternative to the RKKY proposal, also addressed here.
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