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Phase-Dependent Control of Trap Depth and Persistent Luminescence in Strontium Aluminate Phosphors
Published on: December 5, 2025
Deep-trap competition model for TL in alpha-Al2O3:C heating stage
V S Kortov1, I I Milman, E V Moiseykin
1Department of Technical Physics, The Ural State Technical University, 19 Mira Street, 620002 Ekaterinburg, Russia.
Radiation Protection Dosimetry
|April 29, 2006
Summary
Charge carriers in defective alpha-Al2O3 crystals move between traps. This study experimentally confirms a model explaining the interaction between main and deep traps, crucial for thermoluminescence.
Area of Science:
- Solid State Physics
- Materials Science
- Luminescence
Background:
- Thermoluminescence (TL) is a key phenomenon in defective materials.
- Understanding charge carrier dynamics is essential for material characterization.
- Anion-defective alpha-Al2O3 crystals exhibit complex trapping mechanisms.
Purpose of the Study:
- To investigate charge carrier migration between trapping centers in alpha-Al2O3.
- To provide experimental evidence for a proposed model of trap interaction.
- To analyze thermally stimulated and optically stimulated processes.
Main Methods:
- Experimental observation of thermally stimulated migration.
- Experimental observation of optically stimulated transport.
- Analysis of phototransferred thermoluminescence (PTTL).
Main Results:
- Demonstrated thermally stimulated migration of charge carriers from main traps to deep traps.
- Showcased optically stimulated transport of carriers from deep traps back to main traps.
- Observed phototransferred TL at 450 K, confirming carrier movement.
Conclusions:
- The experimental results validate the model of mutual interaction between main and deep traps.
- The findings confirm the proposed mechanism governing TL and PTTL in these crystals.
- This study enhances the understanding of charge carrier dynamics in defective alumina.
