Monitoring small defects on surface microstructures through backscattering measurements
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
P Albella1, F Moreno, J M Saiz
1Grupo de Optica, Departamento de Física Aplicada, Universidad de Cantabria, Spain. albellap@unican.es
Optics Letters
|May 12, 2006
Abstract:
The detection and characterization of small defects on particles or structures of a size comparable with the incident wavelength and located on flat substrates is numerically analyzed. For metallic scattering systems, calculations based on the extinction theorem of physical optics show that geometrical information about a small Gaussian defect can be obtained by partially integrating the backscattering patterns.

