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High-repetition rate Q-switched Nd:YVO4 laser with a composite semiconductor absorber
Yong-Gang Wang1, Xiao-Yu Ma, Ji-Ying Peng
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. chinawygxjw@163.com
Applied Optics
|August 17, 2006
Abstract:
A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber.

