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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Anisotropic and passivation-dependent quantum confinement effects in germanium nanowires: a comparison with silicon
Mingwei Jing1, Ming Ni, Wei Song
1Mesoscopic Physics Laboratory, Department of Physics, Peking University, Beijing 100871, PRC.
Abstract:
Electronic structures of hydrogen-passivated germanium nanowires (GeNWs) along the [100], [110], [111], and [112] directions are studied by using the density functional theory within the generalized gradient approximation. The band gaps of the fully relaxed GeNWs along the [100], [110], and [111] directions are all direct at the smaller sizes, while those of the wires along the [112] direction remain indirect. The magnitude of the band gaps of the GeNWs for a given size approximately follows the order of E(g)[100] > E(g)[111] > E(g)[112] > E(g)[110]. Compared with silicon nanowires, GeNWs exhibit stronger quantum confinement effects. Replacement of H by the more stable ethine group is found to lead to a weakening of the quantum confinement effects of GeNWs.
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