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Updated: Jul 19, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Formation of uniform single-crystalline bismuth sulfide nanowires under mixed-solvent condition
Xiong Wang1, Li Li, Shutao Wang
1Department of Chemistry, University of Science and Technology of China, Hefei, P R China.
Abstract:
Uniform single-crystalline bismuth sulfide nanowires were prepared via a convenient solvothermal route under mixed-solvent condition. The nanowires were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray (EDX) spectrometry and UV-vis spectrophotometer. The growth mechanism of the one-dimensional nanostructures was discussed. The optical absorption band gap of the nanowires is about 1.7 eV, and the blue-shift phenomenon can be observed with respect of that of the bulk Bi2S3, which might bring in new types of applications.

