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Intrinsic domain-wall resistance in ferromagnetic semiconductors
Anh Kiet Nguyen1, R V Shchelushkin, Arne Brataas
1Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim, Norway.
Abstract:
Transport through zinc blende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the effective hole spin-orbit interaction. The intrinsic resistance is independent of the domain-wall shape and width and survives the adiabatic limit. For typical parameters, the intrinsic domain-wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.
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