Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Giant spin-orbit bowing in GaAs1-xBix.

B Fluegel1, S Francoeur, A Mascarenhas

  • 1National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA.

Physical Review Letters
|October 10, 2006
PubMed
Summary

We observed a significant change in spin-orbit splitting energy in dilute gallium arsenide bismuth alloys. This finding enables tuning semiconductor properties for spintronic device applications.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity.

Optics express·2019
Same author

[Mini-sling versus transobturator sling: Efficiency and morbidity].

Gynecologie, obstetrique, fertilite & senologie·2018
Same author

High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe.

Physical review letters·2016
Same author

Phonon Engineering in Isotopically Disordered Silicon Nanowires.

Nano letters·2015
Same author

Magnetic-field-induced delocalized to localized transformation in GaAs:N.

Physical review letters·2014
Same author

Complete quantum control of exciton qubits bound to isoelectronic centres.

Nature communications·2014

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Spin-orbit splitting is a fundamental property of semiconductor electronic band structures.
  • Isoelectronic doping is a technique used to modify semiconductor properties.
  • Gallium arsenide (GaAs) is a widely studied semiconductor material.

Purpose of the Study:

  • To investigate the effect of bismuth (Bi) isoelectronic doping on the spin-orbit splitting energy (Delta0) in GaAs.
  • To explore the potential for tailoring spin-orbit splitting in semiconductors for spintronic applications.

Main Methods:

  • Experimental investigation of dilute GaAs1-xBix alloys with varying Bi concentrations (0% to 1.8%).
  • Measurement of spin-orbit splitting energy (Delta0) using spectroscopic techniques (details not specified in abstract).

Related Experiment Videos

Main Results:

  • Observed a giant bowing (significant change) in the spin-orbit splitting energy (Delta0) in GaAs1-xBix alloys.
  • Demonstrated the first instance of a large relativistic correction to the electronic band structure via isoelectronic doping.
  • The effect was observed with low concentrations of bismuth (up to 1.8%).

Conclusions:

  • Isoelectronic doping with bismuth in GaAs induces substantial relativistic corrections to the electronic band structure.
  • This study establishes a new method for tuning spin-orbit splitting in semiconductors.
  • The findings pave the way for developing advanced spintronic devices.