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Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect
Yeonwoong Jung1, Se-Ho Lee, Dong-Kyun Ko
1Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
Abstract:
Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials
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