Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

The Electrical Double Layer

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

A molecularly impermeable polymer from two-dimensional polyaramids.

Nature·2025

Same author

Disinfection of Respirators with Ultraviolet Radiation.

Journal of research of the National Institute of Standards and Technology·2024

Same author

Microscopy of Woven and Nonwoven Face Covering Materials: Implications for Particle Filtration.

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada·2024

Same author

Common Single-Use Consumer Plastic Products Release Trillions of Sub-100 nm Nanoparticles per Liter into Water during Normal Use.

Environmental science & technology·2022

Same author

Filter Inserts Impact Cloth Mask Performance against Nano- to Micro-Sized Particles.

ACS nano·2021

Same author

Hydration of Hydrophilic Cloth Face Masks Enhances the Filtration of Nanoparticles.

ACS applied nano materials·2021

Search research articles

Related Experiment Video

Updated: Jul 19, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Structural contributions to charge transport across Ni-octanedithiol multilayer junctions.

Lam H Yu¹, Christopher D Zangmeister, James G Kushmerick

¹National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

|November 9, 2006

Summary

We fabricated novel multilayer thin films with 1,8-octanedithiols and nickel atoms. Charge transport revealed molecular vibrations and defect-gating effects, demonstrating the multilayer

More Related Videos

Characterizing Electron Transport through Living Biofilms

Characterizing Electron Transport through Living Biofilms

Published on: June 1, 2018

Fabricating Nanogaps by Nanoskiving

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

Related Experiment Videos

Last Updated: Jul 19, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Characterizing Electron Transport through Living Biofilms

Characterizing Electron Transport through Living Biofilms

Published on: June 1, 2018

Fabricating Nanogaps by Nanoskiving

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

Area of Science:

Molecular electronics
Nanoscale science
Materials science

Background:

Understanding charge transport in molecular junctions is crucial for developing novel electronic devices.
Multilayer thin films offer unique platforms for exploring quantum phenomena at the molecular level.

Purpose of the Study:

To fabricate and characterize multilayer thin films containing 1,8-octanedithiols and nickel atoms.
To investigate the charge transport mechanisms within these molecular multilayer junctions.

Main Methods:

Fabrication of multilayer thin films using 1,8-octanedithiols and Ni atoms.
Low-temperature charge transport measurements.
Analysis of tunneling features and conductance characteristics.

Main Results:

Observed inelastic co-tunneling and resonant tunneling features.
These features correlate with the vibrational excitations of the molecular multilayer.
Identified charge defect-gating effects in several junctions.
Demonstrated that intrinsic multilayer properties dominate charge transport.

Conclusions:

The study successfully fabricated and characterized novel molecular multilayer thin films.
Charge transport is governed by molecular vibrations and defect-gating, influenced by intrinsic multilayer properties.
These findings contribute to the understanding of charge transport in molecular electronic systems.