Related Experiment Video
Updated: Jul 18, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Theoretical analysis of the potential distribution and transportation behavior of the ordered alkyl monolayer-silicon
Jianwei Zhao1, Zhuangqun Huang, Xing Yin
1School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, PR China. Zhaojw@nju.edu.cn
Abstract:
A theoretical approach to the determination of the potential distribution within an organic monolayer sandwiched metal-insulator-semiconductor junction has been proposed with two simplified models, e.g. static (capacitance) model and dynamic (resistance) model. Compared with the resistance model, the capacitance model has been confirmed to be more valid for determining the potential distribution of the system. Further, the transportation behavior of the system has been simulated with a modified electron-tunneling model.
More Related Videos
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
12:32The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
The Electrical Double Layer
MO Theory and Covalent Bonding
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.