III-V nitride epilayers for photoelectrochemical water splitting: GaPN and GaAsPN

Epilayers of single-crystal GaAsPN and GaPN semiconductor samples with varying nitrogen compositions were photoelectrochemically characterized to determine their potential to serve as water splitting photoelectrodes. The band gap and flatband potentials were determined and used to calculate the valence and conduction band edge energies. The band edges for all compositions appear to be too negative by more than 500 mV for any of the materials to effect light-driven water splitting without an external bias. Corrosion analysis was used to establish material stability under operating conditions. GaPN was found to show good stability toward photocorrosion; on the other hand, GaAsPN showed enhanced photocorrosion as compared to GaP.