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Self-mode-locked single-section Fabry-Perot semiconductor lasers at 1.56 microm
Weiguo Yang1, Nicholas J Sauer, Pietro G Bernasconi
1Data/Optical Networks Research, Bell Laboratories, Lucent Technologies, Inc., Holmdel, NJ 07731, USA. wgyang@lucent.com
Applied Optics
|December 15, 2006
Summary
This study analyzes semiconductor laser mode-locking using the additive pulse mode-locking (APM) model. The APM model accurately predicts laser performance, aligning with experimental data for high-frequency optical pulses.
Area of Science:
- Optics and Photonics
- Semiconductor Device Physics
Background:
- Fabry-Perot semiconductor lasers are crucial for optical communications.
- Understanding mode-locking mechanisms is key to optimizing laser performance.
Purpose of the Study:
- To analyze the mode-locking mechanism in single-section, multi-spatial-mode Fabry-Perot semiconductor lasers.
- To validate the additive pulse mode-locking (APM) master equation model for predicting laser performance.
Main Methods:
- Utilized the additive pulse mode-locking (APM) master equation model.
- Estimated critical parameters including equivalent saturable absorber and self-phase modulation.
- Predicted mode-locking operation regimes based on pulse chirp and output power.
Main Results:
- The APM model accurately predicted the mode-locking operation regime.
- Key parameters for saturable absorption and self-phase modulation were estimated.
- Predictions showed good agreement with experimental results.
Conclusions:
- The APM master equation model is effective for analyzing mode-locking in semiconductor lasers.
- The model provides accurate predictions for pulse chirp and output power.
- Validated experimental results for a 40 GHz, 1.56 µm mode-locked laser operation.
