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Updated: Jul 18, 2026
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide
Junqing Hu1, Yang Jiang, Xiangmin Meng
1Center of Super-Diamond and Advanced Films (COSFAD), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, PR China. HU.Junqing@nims.go.jp
Abstract:
We demonstrate the temperature-dependent growth of germanium oxide and silicon oxide based composite nanostructures (multiple nanojunctions of Ge nanowires and SiO(x) nanowires, Ge-filled SiO(2) nanotubes, Ge/SiO(2) coaxial nanocables, and a variety of interesting micrometer-sized structures), aligned SiO(x) nanowire assemblies, and SiO(x) microtubes. The structures were characterized by SEM, TEM, energy-dispersive X-ray spectroscopy, and electron diffraction. The combination of laser ablation of a germanium target and thermal evaoporation of silicon monoxide powders resulted in the formation of Ge and SiO(x) species in a carrier gas; the nano/micro-sized structures grow by either a Ge-catalyzed vapor-liquid-solid or a Ge-nanowire-templated vapor-solid process.
