DNA detection by an extended-gate FET sensor with a high-frequency voltage superimposed onto a reference electrode

Masao Kamahori1, Yu Ishige, Maki Shimoda

  • 1Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan. masao.kamahori.qj@hitachi.com

Summary

A new field-effect transistor (FET) sensor for DNA detection was improved using a high-frequency voltage technique. This method significantly reduces signal stabilization time and enhances sensitivity for detecting DNA hybridization and extension reactions.