Quantum Hall effect in polar oxide heterostructures
Related Experiment Video
Updated: Jul 17, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
A Tsukazaki1, A Ohtomo, T Kita
1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Abstract:
We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/Mg(x)Zn(1-x)O heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 x 10(12) to 3.7 x 10(12) per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 +/- 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.
More Related Videos
Related Concept Videos
The Hall Effect
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Potential Due to a Polarized Object
Valence Bond Theory
π Electron Effects on Chemical Shift: Overview
Dielectric Polarization in a Capacitor

