A low-profile three-dimensional neural stimulating array with on-chip current generation.

Area of Science:

• Neuroscience
• Biomedical Engineering
• Materials Science

Background:

• Selective neural stimulation is crucial for understanding and treating central nervous system disorders.
• Existing microelectrode arrays often face challenges with profile, power consumption, and stimulation precision.

Purpose of the Study:

• To develop and characterize a novel low-profile silicon microelectrode array for selective neural stimulation.
• To integrate advanced circuitry for precise current delivery and reduced power dissipation.

Main Methods:

• Fabrication of 64-site, 8-channel planar CMOS probes with integrated circuitry.
• Design of a cortical support platform and fold-down structures for chronic implantation.
• Characterization of current generation, nonlinearity, biphasic mismatch, and power dissipation.

Main Results:

• The microelectrode array achieves selective stimulation with high current resolution (1 microA).
• Demonstrated low differential nonlinearity (<0.8 LSBs) and biphasic mismatch (<0.23 LSBs).
• Achieved low average power dissipation of approximately 97 microW per channel.

Conclusions:

• The developed low-profile silicon microelectrode array enables precise and efficient neural stimulation.
• The design is suitable for chronic implantation in the central nervous system.
• This technology holds promise for advancing neuroprosthetics and neural interface applications.