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Kondo effect in magnetic tunnel junctions.

K I Lee1, S J Joo, J H Lee

  • 1Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-792, Korea.

Physical Review Letters
|March 16, 2007
PubMed
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Tunneling magnetoresistance in magnetic tunnel junctions (MTJs) decreases with temperature. The Kondo effect explains the observed resistance behavior and anomalies at low temperatures, with a Kondo temperature between 20-30 K.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Magnetic tunnel junctions (MTJs) are crucial for spintronic devices.
  • Understanding temperature-dependent transport properties is key to device performance.
  • Plasma oxidation methods influence MTJ characteristics.

Purpose of the Study:

  • Investigate the temperature dependence of tunneling magnetoresistance in MTJs.
  • Analyze the underlying physical mechanisms causing observed resistance anomalies.
  • Determine the Kondo temperature in high plasma power oxidized MTJs.

Main Methods:

  • Fabrication of MTJs using high plasma power oxidation.
  • Temperature-dependent electrical resistance measurements.
  • Analysis of dynamic resistance and zero-bias anomalies.

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Main Results:

  • Tunneling magnetoresistance suppression with decreasing temperature observed.
  • Strong temperature dependence of junction resistance, including logarithmic behavior.
  • Zero-bias anomalies and scaling behavior in resistance versus temperature data.
  • Kondo temperature (TK) estimated to be 20-30 K.

Conclusions:

  • The Kondo effect consistently explains the observed transport phenomena in these MTJs.
  • High plasma power oxidation leads to MTJs exhibiting Kondo physics.
  • The findings provide insights into controlling spintronic device behavior via material processing.