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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Performance of silicon nanocrystal non-volatile memory devices under various programming mechanisms
1School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798.
Journal of Nanoscience and Nanotechnology
|April 26, 2007
Summary
Silicon nanocrystal memory devices were fabricated and tested. Drain-bias channel-hot-electron (DCHE) programming showed the largest memory window, while source-bias channel-hot-electron (SCHE) offered better retention than DCHE.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Non-volatile memory is crucial for modern electronics.
- Silicon nanocrystals offer potential for advanced memory devices.
- Efficient programming mechanisms are key to memory performance.
Purpose of the Study:
- To fabricate non-volatile memory devices using silicon nanocrystals.
- To investigate memory performance under different programming mechanisms.
- To compare Fowler-Nordheim (FN), drain-bias channel-hot-electron (DCHE), and source-bias channel-hot-electron (SCHE) programming.
Main Methods:
- Fabrication of silicon nanocrystal memory devices with low-energy Si+ implantation.
- Experimental investigation of memory performance metrics.
- Analysis of programming mechanisms: FN, DCHE, and SCHE.
Main Results:
- DCHE programming resulted in the largest memory window.
- SCHE programming demonstrated longer retention time compared to DCHE.
- Both DCHE and SCHE programming outperformed FN in memory window, endurance, and retention.
Conclusions:
- DCHE and SCHE are superior programming mechanisms for silicon nanocrystal memory.
- SCHE programming offers improved data retention.
- These findings advance the development of high-performance non-volatile memory.
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