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Updated: Jul 15, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping
Qimin Yan1, Bing Huang, Jie Yu
1Department of Physics, Tsinghua University, Beijing 100084, China.
Abstract:
We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.
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