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Synthesis, characterization, and optical properties of In2O3 semiconductor nanowires
Guoxiu Wang1, Jinsoo Park, David Wexler
1School of Mechanical, Materials and Mechatronic Engineering, Institute for Superconducting and Electronic Materials, University of Wollongong, NSW 2522, Australia. gwang@uow.edu.au
Abstract:
In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 degrees C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3 nanowires and branched In2O3 nanowires. The PL spectra of In2O3 nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure.
